Director, Ultra-High-Voltage SiC Device Technology

Job Purpose:

Navitas Semiconductor (Nasdaq: NVTS) is a next-generation power semiconductor leader driving innovation in gallium nitride (GaN) and high-voltage silicon carbide (SiC) technologies. Our products enable faster, more efficient power delivery across AI data centers, high-performance computing, energy and grid infrastructure, and industrial electrification.

With more than 30 years of combined expertise in wide bandgap technologies, GaNFast™ power ICs integrate GaN power, drive, control, sensing, and protection, delivering faster power delivery, higher system density, and greater efficiency. GeneSiC™ high-voltage SiC devices leverage patented trench-assisted planar technology to provide industry-leading voltage capability, efficiency, and reliability for medium-voltage grid and infrastructure applications.

We are seeking a Director of Ultra-High-Voltage SiC Device Technology to join our fast-growing, collaborative team. The ideal candidate is self-motivated, energetic, and able to thrive in a high-growth, innovative environment, contributing directly to technologies that are shaping the future of power electronics.

The Director of Ultra-High-Voltage SiC Device Technology reports to the SVP & Chief Technology Officer and owns device and process technology for our ultra-high-voltage SiC roadmap, from 3.3 kV to 10 kV and beyond: MOSFETs, PiN diodes, JFETs and bipolar devices. The director leads U.S. government-funded technology programs as technical lead and principal investigator, and works hands-on with foundry and research partners to take new device concepts from simulation to qualified silicon.

Key Responsibilities and Duties:

• Ultra-High-Voltage Device Technology: Lead device architecture and process technology for ultra-high-voltage SiC devices (3.3 kV to 10 kV+), including MOSFETs, PiN diodes, JFETs and IGBTs or other bipolar devices.
• Government Program Leadership: Serve as technical lead and principal investigator on U.S. government-funded development programs: define technical plans, own deliverables and milestones, and represent Navitas in program reviews.
• Process Integration with Partners: Define process flows and key modules (implantation and activation, gate oxide, ohmic contacts, edge termination, passivation) with foundry and research partners, and drive split-lot experiments to closure.
• Design, Simulation and Characterization: Direct device simulation (TCAD), mask design reviews and characterization plans, and translate results into design and process changes.
• Reliability and Test Methods: Establish ultra-high-voltage characterization and reliability methods (HTRB, HTGB, avalanche and short-circuit ruggedness) with the reliability and test teams.
• Team Development: Mentor device engineers across U.S. and India sites, and help grow the ultra-high-voltage SiC team.
• IP and Customer Engagement: Build Navitas' intellectual property through patents and selected publications, and support customers and business units on ultra-high-voltage product definition.

Knowledge, Skills, Abilities, and Other Characteristics (KSAO’s)

• Deep understanding of SiC device physics for blocking voltages from 3.3 kV to 10 kV+, including drift-layer design, edge termination and bipolar degradation
• Strong knowledge of SiC process modules: implantation and activation, gate oxidation, ohmic contacts, etching and passivation
• TCAD-driven device design and disciplined, data-driven experiment planning
• Familiarity with high-voltage test and reliability methods (HTRB, HTGB, avalanche, short circuit)
• Strong analytical and problem-solving skills
• Excellent technical writing and communication, including proposals and government program reporting
• Comfortable working with foundries, research institutes and teams across global time zones
• Leading by example